Efficiency Improvement with Silicon Carbide Based Power Modules - ISSUE 6 – SEPTEMBER 2009
نویسندگان
چکیده
Whereas SiC switches have the overall lowest dynamic losses, they show higher static losses due to the lack of conductivity modulation and the necessary chip size limitations due to the still high SiC base material price. The frequency dependence of the total losses of the various 1200V configurations (Si-IGBT + Si freewheeling diode, Si IGBT + SiC Schottky diode, SiC-JFET cascode plus internal body diode of the cascode) shows that a module solution containing a state of the art SiC switch will outperform all other options for switching frequencies >20kHz. Xi Zhang, Daniel Domes, Roland Rupp, Infineon Technologies, Warstein/Neubiberg, Germany
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